M06400 - SEMI M64 - Test Method for the EL2 Deep Donor Concentration in Semi-Insulating (SI) Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy Revision:SEMI M64-0915 - Superseded This Test Method deals with

This Test Method deals with junction-to-case measurements of thermal resistance in air environment

SEMI G18 — Materials Used in the Production of Etched Leadframes for Semiconductor Devices

SEMI E82-0302 (technical revision)

SEMI M73 — Test Methods for Extracting Relevant Characteristics from Measured Wafer Edge Profiles

Determining the electrical length of RF cable assemblies at the nominal operating frequency in terms of degrees of phase shift

M06400 - SEMI M64 - Test Method for the EL2 Deep Donor Concentration in Semi-Insulating (SI) Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy Revision:SEMI M64-0915 - Superseded This Test Method deals withThe purpose of this Test Method is to specify a method to measure the concentration of the deep donor EL2 in SI GaAs by infrared absorption. This Test Method covers a procedure for measuring the concentration of the deep donor EL2 in SI GaAs. This method focuses on improving the accuracy and repeatability of the measurement by standardizing the test conditions and reporting and by routine calibration of the measurement. This Test Method is intended to